Oxygen Vacancy Engineering for Enhanced Remanent Polarization and Memory Window in a-IGZO/HZO Ferroelectric Field-Effect Transistors
- DOI
- 10.1021/acsami.6c15029
- Published
- 2026-10-15
- Container
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c15029,
title = {Oxygen Vacancy Engineering for Enhanced Remanent Polarization and Memory Window in a-IGZO/HZO Ferroelectric Field-Effect Transistors},
author = {Hyojin Yang and Hwan Jin Kim and Haneul Lee and Dae Hwan Kim and Sung-Jin Choi and Dong Myong Kim and Yoon Jung Lee and Min-Kyu Park and Sung Yun Woo and Haesung Kim and Jong-Ho Bae},
year = {2026},
journal = {ACS Applied Materials \& Interfaces},
doi = {10.1021/acsami.6c15029},
url = {https://doi.org/10.1021/acsami.6c15029}
}RIS
TY - JOUR TI - Oxygen Vacancy Engineering for Enhanced Remanent Polarization and Memory Window in a-IGZO/HZO Ferroelectric Field-Effect Transistors AU - Hyojin Yang AU - Hwan Jin Kim AU - Haneul Lee AU - Dae Hwan Kim AU - Sung-Jin Choi AU - Dong Myong Kim AU - Yoon Jung Lee AU - Min-Kyu Park AU - Sung Yun Woo AU - Haesung Kim AU - Jong-Ho Bae PY - 2026 JO - ACS Applied Materials & Interfaces DO - 10.1021/acsami.6c15029 UR - https://doi.org/10.1021/acsami.6c15029 ER -
APA
Yang, H., Kim, H. J., Lee, H., Kim, D. H., Choi, S., Kim, D. M., Lee, Y. J., Park, M., Woo, S. Y., Kim, H., & Bae, J. (2026). Oxygen Vacancy Engineering for Enhanced Remanent Polarization and Memory Window in a-IGZO/HZO Ferroelectric Field-Effect Transistors. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.6c15029
Source records
- crossref · retrieved 2026-11-10T14:31:27.194Z