Decoupling Thermal and Electronic Effects of Metal Contacts in Bilayer MoS2 Transistors.

Xu Z, Zhao W, Guzman R, Shi JA, Li M, Zhou W, Zhu M

DOI: 10.1021/acsami.6c15768
Published: 2026 Oct 14
Container: ACS applied materials & interfaces
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.6c15768,
  title = {Decoupling Thermal and Electronic Effects of Metal Contacts in Bilayer MoS2 Transistors.},
  author = {Xu Z and Zhao W and Guzman R and Shi JA and Li M and Zhou W and Zhu M},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c15768},
  url = {https://doi.org/10.1021/acsami.6c15768}
}

RIS

TY  - JOUR
TI  - Decoupling Thermal and Electronic Effects of Metal Contacts in Bilayer MoS2 Transistors.
AU  - Xu Z
AU  - Zhao W
AU  - Guzman R
AU  - Shi JA
AU  - Li M
AU  - Zhou W
AU  - Zhu M
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c15768
UR  - https://doi.org/10.1021/acsami.6c15768
ER  -

APA

Z, X., W, Z., R, G., JA, S., M, L., W, Z., & M, Z. (2026). Decoupling Thermal and Electronic Effects of Metal Contacts in Bilayer MoS2 Transistors.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c15768

Source records

pubmed · retrieved 2026-11-10T07:38:42.362Z