Composition-Dependent Atomic Layer Etching of Multicomponent Oxide Semiconductors with Preserved Electrical Performance.

Kim MC, Kim MS, Lee H, Yang HL, Ahn J, Park JS

DOI: 10.1021/acsami.6c16962
Published: 2026 Nov 4
Container: ACS applied materials & interfaces
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.6c16962,
  title = {Composition-Dependent Atomic Layer Etching of Multicomponent Oxide Semiconductors with Preserved Electrical Performance.},
  author = {Kim MC and Kim MS and Lee H and Yang HL and Ahn J and Park JS},
  year = {2026},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.6c16962},
  url = {https://doi.org/10.1021/acsami.6c16962}
}

RIS

TY  - JOUR
TI  - Composition-Dependent Atomic Layer Etching of Multicomponent Oxide Semiconductors with Preserved Electrical Performance.
AU  - Kim MC
AU  - Kim MS
AU  - Lee H
AU  - Yang HL
AU  - Ahn J
AU  - Park JS
PY  - 2026
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.6c16962
UR  - https://doi.org/10.1021/acsami.6c16962
ER  -

APA

MC, K., MS, K., H, L., HL, Y., J, A., & JS, P. (2026). Composition-Dependent Atomic Layer Etching of Multicomponent Oxide Semiconductors with Preserved Electrical Performance.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c16962

Source records

pubmed · retrieved 2026-11-10T09:13:43.331Z