Interfacial Doping and Band Bending Boosting Thermoelectric Power Factor in 1T'-MoTe2/Bi2Te3 Quantum-Dot Films.
- DOI
- 10.1021/acsami.6c17387
- Published
- 2026 Nov 4
- Container
- ACS applied materials & interfaces
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c17387,
title = {Interfacial Doping and Band Bending Boosting Thermoelectric Power Factor in 1T'-MoTe2/Bi2Te3 Quantum-Dot Films.},
author = {Ge H and Liu W and Wang Z and Wu Y and Hong X and Li J and Li Z and Su T and Luo T and Wei Z and Wang A and Yan F and Tong Q and Li X and Xie X and Sang H and Liu Y and Hong M and Tang X},
year = {2026},
journal = {ACS applied materials \& interfaces},
doi = {10.1021/acsami.6c17387},
url = {https://doi.org/10.1021/acsami.6c17387}
}RIS
TY - JOUR TI - Interfacial Doping and Band Bending Boosting Thermoelectric Power Factor in 1T'-MoTe2/Bi2Te3 Quantum-Dot Films. AU - Ge H AU - Liu W AU - Wang Z AU - Wu Y AU - Hong X AU - Li J AU - Li Z AU - Su T AU - Luo T AU - Wei Z AU - Wang A AU - Yan F AU - Tong Q AU - Li X AU - Xie X AU - Sang H AU - Liu Y AU - Hong M AU - Tang X PY - 2026 JO - ACS applied materials & interfaces DO - 10.1021/acsami.6c17387 UR - https://doi.org/10.1021/acsami.6c17387 ER -
APA
H, G., W, L., Z, W., Y, W., X, H., J, L., Z, L., T, S., T, L., Z, W., A, W., F, Y., Q, T., X, L., X, X., H, S., Y, L., M, H., & X, T. (2026). Interfacial Doping and Band Bending Boosting Thermoelectric Power Factor in 1T'-MoTe2/Bi2Te3 Quantum-Dot Films.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.6c17387
Source records
- pubmed · retrieved 2026-11-10T12:34:22.558Z