Localized Trap-State Engineering of Subthreshold Swing in Amorphous In–Ga–O Thin-Film Transistors via Vertically Positioned Sn δ-Doping
- DOI
- 10.1021/acsami.6c17743
- Published
- 2026-11-06
- Container
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
Credibility signals
uncertain Score 64/100 under policy 1.0.0. This is a metadata assessment, not a judgment of the paper's conclusions.
Show all credibility signals
- supportingDOI registered: A matching record was returned by Crossref.
- supportingDOI resolves: A matching record was returned by Crossref.
- not scoredDirectory of Open Access Journals: No matching DOAJ record was present in this response. No allow-list match; this is not evidence of low credibility.
- not scoredMEDLINE indexed: Not checked or no result supplied; no credibility inference made.
- not scoredOpenAlex core source: Not checked or no result supplied; no credibility inference made.
- not scoredKnown publisher allow-list: Not checked or no result supplied; no credibility inference made.
- not scoredROR affiliation: Not checked or no result supplied; no credibility inference made.
- not scoredRetraction Watch retraction: No retraction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch expression of concern: No expression of concern notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch correction: No correction notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredRetraction Watch reinstatement: No reinstatement notice matched this DOI in the deployed snapshot. No matching event found; coverage may be incomplete.
- not scoredOpen access status: Not checked or no result supplied; no credibility inference made.
- not scoredPublication license: Not checked or no result supplied; no credibility inference made.
- not scoredPublication version: A publication version was supplied but is not scored.
- supportingMetadata completeness: All 6 scored descriptive metadata groups are present.
Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c17743,
title = {Localized Trap-State Engineering of Subthreshold Swing in Amorphous In–Ga–O Thin-Film Transistors via Vertically Positioned Sn δ-Doping},
author = {Jae Young Lee and Jeong Eun Oh and Ji Hun An and Ki Hoon Choi and Jae Kyeong Jeong},
year = {2026},
journal = {ACS Applied Materials \& Interfaces},
doi = {10.1021/acsami.6c17743},
url = {https://doi.org/10.1021/acsami.6c17743}
}RIS
TY - JOUR TI - Localized Trap-State Engineering of Subthreshold Swing in Amorphous In–Ga–O Thin-Film Transistors via Vertically Positioned Sn δ-Doping AU - Jae Young Lee AU - Jeong Eun Oh AU - Ji Hun An AU - Ki Hoon Choi AU - Jae Kyeong Jeong PY - 2026 JO - ACS Applied Materials & Interfaces DO - 10.1021/acsami.6c17743 UR - https://doi.org/10.1021/acsami.6c17743 ER -
APA
Lee, J. Y., Oh, J. E., An, J. H., Choi, K. H., & Jeong, J. K. (2026). Localized Trap-State Engineering of Subthreshold Swing in Amorphous In–Ga–O Thin-Film Transistors via Vertically Positioned Sn δ-Doping. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.6c17743
Source records
- crossref · retrieved 2026-11-07T04:55:36.927Z