High-Mobility a-InZnO Thin-Film Transistors Incorporating an Oxygen-Related Defect Control Layer for Improved Illumination Stability and Environmental Reliability
- DOI
- 10.1021/acsami.6c17895
- Published
- 2026-10-19
- Container
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.6c17895,
title = {High-Mobility a-InZnO Thin-Film Transistors Incorporating an Oxygen-Related Defect Control Layer for Improved Illumination Stability and Environmental Reliability},
author = {Jihoon Han and Dong Keun Lee and Shilin Lu and Hyun Jae Kim},
year = {2026},
journal = {ACS Applied Materials \& Interfaces},
doi = {10.1021/acsami.6c17895},
url = {https://doi.org/10.1021/acsami.6c17895}
}RIS
TY - JOUR TI - High-Mobility a-InZnO Thin-Film Transistors Incorporating an Oxygen-Related Defect Control Layer for Improved Illumination Stability and Environmental Reliability AU - Jihoon Han AU - Dong Keun Lee AU - Shilin Lu AU - Hyun Jae Kim PY - 2026 JO - ACS Applied Materials & Interfaces DO - 10.1021/acsami.6c17895 UR - https://doi.org/10.1021/acsami.6c17895 ER -
APA
Han, J., Lee, D. K., Lu, S., & Kim, H. J. (2026). High-Mobility a-InZnO Thin-Film Transistors Incorporating an Oxygen-Related Defect Control Layer for Improved Illumination Stability and Environmental Reliability. ACS Applied Materials & Interfaces. https://doi.org/10.1021/acsami.6c17895
Source records
- crossref · retrieved 2026-11-10T09:25:39.764Z