Electronic Transport in Bilayer MoS(2) Encapsulated in HfO(2).

Matis BR, Garces NY, Cleveland ER, Houston BH, Baldwin JW

DOI: 10.1021/acsami.7b04397
Published: 2017 Aug 23
Container: ACS applied materials & interfaces
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.7b04397,
  title = {Electronic Transport in Bilayer MoS(2) Encapsulated in HfO(2).},
  author = {Matis BR and Garces NY and Cleveland ER and Houston BH and Baldwin JW},
  year = {2017},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.7b04397},
  url = {https://doi.org/10.1021/acsami.7b04397}
}

RIS

TY  - JOUR
TI  - Electronic Transport in Bilayer MoS(2) Encapsulated in HfO(2).
AU  - Matis BR
AU  - Garces NY
AU  - Cleveland ER
AU  - Houston BH
AU  - Baldwin JW
PY  - 2017
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.7b04397
UR  - https://doi.org/10.1021/acsami.7b04397
ER  -

APA

BR, M., NY, G., ER, C., BH, H., & JW, B. (2017). Electronic Transport in Bilayer MoS(2) Encapsulated in HfO(2).. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.7b04397

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pubmed · retrieved 2026-09-26T23:23:11.665Z