Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS(2)/WSe(2) van der Waals Heterostructure.
- DOI
- 10.1021/acsami.8b05549
- Published
- 2018 Jul 18
- Container
- ACS applied materials & interfaces
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsami.8b05549,
title = {Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS(2)/WSe(2) van der Waals Heterostructure.},
author = {Khan MA and Rathi S and Lee C and Lim D and Kim Y and Yun SJ and Youn DH and Kim GH},
year = {2018},
journal = {ACS applied materials \& interfaces},
doi = {10.1021/acsami.8b05549},
url = {https://doi.org/10.1021/acsami.8b05549}
}RIS
TY - JOUR TI - Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS(2)/WSe(2) van der Waals Heterostructure. AU - Khan MA AU - Rathi S AU - Lee C AU - Lim D AU - Kim Y AU - Yun SJ AU - Youn DH AU - Kim GH PY - 2018 JO - ACS applied materials & interfaces DO - 10.1021/acsami.8b05549 UR - https://doi.org/10.1021/acsami.8b05549 ER -
APA
MA, K., S, R., C, L., D, L., Y, K., SJ, Y., DH, Y., & GH, K. (2018). Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS(2)/WSe(2) van der Waals Heterostructure.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.8b05549
Source records
- pubmed · retrieved 2026-09-27T08:48:53.803Z