Spectroscopic and Electrical Characterizations of Low-Damage Phosphorous-Doped Graphene via Ion Implantation.

He SM, Huang CC, Liou JW, Woon WY, Su CY

DOI: 10.1021/acsami.9b18479
Published: 2019 Dec 18
Container: ACS applied materials & interfaces
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsami.9b18479,
  title = {Spectroscopic and Electrical Characterizations of Low-Damage Phosphorous-Doped Graphene via Ion Implantation.},
  author = {He SM and Huang CC and Liou JW and Woon WY and Su CY},
  year = {2019},
  journal = {ACS applied materials \& interfaces},
  doi = {10.1021/acsami.9b18479},
  url = {https://doi.org/10.1021/acsami.9b18479}
}

RIS

TY  - JOUR
TI  - Spectroscopic and Electrical Characterizations of Low-Damage Phosphorous-Doped Graphene via Ion Implantation.
AU  - He SM
AU  - Huang CC
AU  - Liou JW
AU  - Woon WY
AU  - Su CY
PY  - 2019
JO  - ACS applied materials & interfaces
DO  - 10.1021/acsami.9b18479
UR  - https://doi.org/10.1021/acsami.9b18479
ER  -

APA

SM, H., CC, H., JW, L., WY, W., & CY, S. (2019). Spectroscopic and Electrical Characterizations of Low-Damage Phosphorous-Doped Graphene via Ion Implantation.. ACS applied materials & interfaces. https://doi.org/10.1021/acsami.9b18479

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pubmed · retrieved 2026-09-25T22:15:09.925Z