Stability of Nanometer-Thick Layered Gallium Chalcogenides and Improvements via Hydrogen Passivation.

Gutiérrez Y, Dicorato S, Dilonardo E, Palumbo F, Giangregorio MM, Losurdo M

DOI: 10.1021/acsanm.3c03899
Published: 2023 Nov 10
Container: ACS applied nano materials
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1021/acsanm.3c03899,
  title = {Stability of Nanometer-Thick Layered Gallium Chalcogenides and Improvements via Hydrogen Passivation.},
  author = {Gutiérrez Y and Dicorato S and Dilonardo E and Palumbo F and Giangregorio MM and Losurdo M},
  year = {2023},
  journal = {ACS applied nano materials},
  doi = {10.1021/acsanm.3c03899},
  url = {https://doi.org/10.1021/acsanm.3c03899}
}

RIS

TY  - JOUR
TI  - Stability of Nanometer-Thick Layered Gallium Chalcogenides and Improvements via Hydrogen Passivation.
AU  - Gutiérrez Y
AU  - Dicorato S
AU  - Dilonardo E
AU  - Palumbo F
AU  - Giangregorio MM
AU  - Losurdo M
PY  - 2023
JO  - ACS applied nano materials
DO  - 10.1021/acsanm.3c03899
UR  - https://doi.org/10.1021/acsanm.3c03899
ER  -

APA

Y, G., S, D., E, D., F, P., MM, G., & M, L. (2023). Stability of Nanometer-Thick Layered Gallium Chalcogenides and Improvements via Hydrogen Passivation.. ACS applied nano materials. https://doi.org/10.1021/acsanm.3c03899

Source records

pubmed · retrieved 2026-09-26T01:27:53.522Z
europe-pmc · retrieved 2026-09-26T01:27:53.531Z