Self-Focusing SIMS Enables Quantitative Dopant Analysis in Nanoscale Silicon Devices beyond Conventional Spatial Resolution Limits

Valentina Spampinato, Alexis Franquet, Paul van der Heide

Open source

DOI
10.1021/acsmeasuresciau.6c00086
Published
2026-06-08
Container
ACS Measurement Science Au
Publisher
American Chemical Society (ACS)
Open access
unknown

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BibTeX

@article{allodium:10.1021/acsmeasuresciau.6c00086,
  title = {Self-Focusing
SIMS Enables Quantitative Dopant Analysis
in Nanoscale Silicon Devices beyond Conventional Spatial Resolution
Limits},
  author = {Valentina Spampinato and Alexis Franquet and Paul van der Heide},
  year = {2026},
  journal = {ACS Measurement Science
Au},
  doi = {10.1021/acsmeasuresciau.6c00086},
  url = {https://doi.org/10.1021/acsmeasuresciau.6c00086}
}

RIS

TY  - JOUR
TI  - Self-Focusing
SIMS Enables Quantitative Dopant Analysis
in Nanoscale Silicon Devices beyond Conventional Spatial Resolution
Limits
AU  - Valentina Spampinato
AU  - Alexis Franquet
AU  - Paul van der Heide
PY  - 2026
JO  - ACS Measurement Science
Au
DO  - 10.1021/acsmeasuresciau.6c00086
UR  - https://doi.org/10.1021/acsmeasuresciau.6c00086
ER  - 

APA

Spampinato, V., Franquet, A., & Heide, P. V. D. (2026). Self-Focusing SIMS Enables Quantitative Dopant Analysis in Nanoscale Silicon Devices beyond Conventional Spatial Resolution Limits. ACS Measurement Science Au. https://doi.org/10.1021/acsmeasuresciau.6c00086

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