Self-Focusing SIMS Enables Quantitative Dopant Analysis in Nanoscale Silicon Devices beyond Conventional Spatial Resolution Limits
- DOI
- 10.1021/acsmeasuresciau.6c00086
- Published
- 2026-06-08
- Container
- ACS Measurement Science Au
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsmeasuresciau.6c00086,
title = {Self-Focusing
SIMS Enables Quantitative Dopant Analysis
in Nanoscale Silicon Devices beyond Conventional Spatial Resolution
Limits},
author = {Valentina Spampinato and Alexis Franquet and Paul van der Heide},
year = {2026},
journal = {ACS Measurement Science
Au},
doi = {10.1021/acsmeasuresciau.6c00086},
url = {https://doi.org/10.1021/acsmeasuresciau.6c00086}
}RIS
TY - JOUR TI - Self-Focusing SIMS Enables Quantitative Dopant Analysis in Nanoscale Silicon Devices beyond Conventional Spatial Resolution Limits AU - Valentina Spampinato AU - Alexis Franquet AU - Paul van der Heide PY - 2026 JO - ACS Measurement Science Au DO - 10.1021/acsmeasuresciau.6c00086 UR - https://doi.org/10.1021/acsmeasuresciau.6c00086 ER -
APA
Spampinato, V., Franquet, A., & Heide, P. V. D. (2026). Self-Focusing SIMS Enables Quantitative Dopant Analysis in Nanoscale Silicon Devices beyond Conventional Spatial Resolution Limits. ACS Measurement Science Au. https://doi.org/10.1021/acsmeasuresciau.6c00086
Source records
- crossref · retrieved 2026-09-26T02:15:25.219Z