Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces.

Tagliabue G, DuChene JS, Habib A, Sundararaman R, Atwater HA

DOI: 10.1021/acsnano.0c00713
Published: 2020 May 26
Container: ACS nano
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsnano.0c00713,
  title = {Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces.},
  author = {Tagliabue G and DuChene JS and Habib A and Sundararaman R and Atwater HA},
  year = {2020},
  journal = {ACS nano},
  doi = {10.1021/acsnano.0c00713},
  url = {https://doi.org/10.1021/acsnano.0c00713}
}

RIS

TY  - JOUR
TI  - Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces.
AU  - Tagliabue G
AU  - DuChene JS
AU  - Habib A
AU  - Sundararaman R
AU  - Atwater HA
PY  - 2020
JO  - ACS nano
DO  - 10.1021/acsnano.0c00713
UR  - https://doi.org/10.1021/acsnano.0c00713
ER  -

APA

G, T., JS, D., A, H., R, S., & HA, A. (2020). Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces.. ACS nano. https://doi.org/10.1021/acsnano.0c00713

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pubmed · retrieved 2026-09-27T11:03:54.233Z