Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits
- DOI
- 10.1021/acsnano.2c00334
- Published
- 2022-04-19
- Container
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsnano.2c00334,
title = {Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits},
author = {Jaeyong Jeong and Seong Kwang Kim and Jongmin Kim and Dae-Myeong Geum and Duckhyun Kim and Eunju Jo and Hakcheon Jeong and Juyeong Park and Jae-Hyung Jang and Shinhyun Choi and Inyong Kwon and Sanghyeon Kim},
year = {2022},
journal = {ACS Nano},
doi = {10.1021/acsnano.2c00334},
url = {https://doi.org/10.1021/acsnano.2c00334}
}RIS
TY - JOUR TI - Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits AU - Jaeyong Jeong AU - Seong Kwang Kim AU - Jongmin Kim AU - Dae-Myeong Geum AU - Duckhyun Kim AU - Eunju Jo AU - Hakcheon Jeong AU - Juyeong Park AU - Jae-Hyung Jang AU - Shinhyun Choi AU - Inyong Kwon AU - Sanghyeon Kim PY - 2022 JO - ACS Nano DO - 10.1021/acsnano.2c00334 UR - https://doi.org/10.1021/acsnano.2c00334 ER -
APA
Jeong, J., Kim, S. K., Kim, J., Geum, D., Kim, D., Jo, E., Jeong, H., Park, J., Jang, J., Choi, S., Kwon, I., & Kim, S. (2022). Heterogeneous and Monolithic 3D Integration of III–V-Based Radio Frequency Devices on Si CMOS Circuits. ACS Nano. https://doi.org/10.1021/acsnano.2c00334
Source records
- crossref · retrieved 2026-11-05T18:26:33.774Z