Nanostructured h-WO(3)-Based Ionologic Gates with Enhanced Rectification and Transistor Functionality.

Bahrawy A, Galek P, Gellrich C, Niese N, Mohamed MAA, Hantusch M, Grothe J, Kaskel S

DOI: 10.1021/acsnano.5c02035
Published: 2025 Jun 10
Container: ACS nano
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1021/acsnano.5c02035,
  title = {Nanostructured h-WO(3)-Based Ionologic Gates with Enhanced Rectification and Transistor Functionality.},
  author = {Bahrawy A and Galek P and Gellrich C and Niese N and Mohamed MAA and Hantusch M and Grothe J and Kaskel S},
  year = {2025},
  journal = {ACS nano},
  doi = {10.1021/acsnano.5c02035},
  url = {https://doi.org/10.1021/acsnano.5c02035}
}

RIS

TY  - JOUR
TI  - Nanostructured h-WO(3)-Based Ionologic Gates with Enhanced Rectification and Transistor Functionality.
AU  - Bahrawy A
AU  - Galek P
AU  - Gellrich C
AU  - Niese N
AU  - Mohamed MAA
AU  - Hantusch M
AU  - Grothe J
AU  - Kaskel S
PY  - 2025
JO  - ACS nano
DO  - 10.1021/acsnano.5c02035
UR  - https://doi.org/10.1021/acsnano.5c02035
ER  -

APA

A, B., P, G., C, G., N, N., MAA, M., M, H., J, G., & S, K. (2025). Nanostructured h-WO(3)-Based Ionologic Gates with Enhanced Rectification and Transistor Functionality.. ACS nano. https://doi.org/10.1021/acsnano.5c02035

Source records

pubmed · retrieved 2026-09-26T09:43:16.410Z