Enhancing Gate Control and Mitigating Short Channel Effects in 20-50 nm Channel Length Amorphous Oxide Thin-Film Transistors.

Yoon C, Ahn J, Zhou Y, Kulkarni JP, Dodabalapur A.

DOI: 10.1021/acsnano.5c10260
Published: 2025-10-23
Container: ACS Nano
Publisher: Not recorded
Open access: no

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Cite this work

BibTeX

@article{allodium:10.1021/acsnano.5c10260,
  title = {Enhancing Gate Control and Mitigating Short Channel Effects in 20-50 nm Channel Length Amorphous Oxide Thin-Film Transistors.},
  author = {Yoon C and  Ahn J and  Zhou Y and  Kulkarni JP and  Dodabalapur A.},
  year = {2025},
  journal = {ACS Nano},
  doi = {10.1021/acsnano.5c10260},
  url = {https://doi.org/10.1021/acsnano.5c10260}
}

RIS

TY  - JOUR
TI  - Enhancing Gate Control and Mitigating Short Channel Effects in 20-50 nm Channel Length Amorphous Oxide Thin-Film Transistors.
AU  - Yoon C
AU  -  Ahn J
AU  -  Zhou Y
AU  -  Kulkarni JP
AU  -  Dodabalapur A.
PY  - 2025
JO  - ACS Nano
DO  - 10.1021/acsnano.5c10260
UR  - https://doi.org/10.1021/acsnano.5c10260
ER  -

APA

C, Y., J, A., Y, Z., JP, K., & A., D. (2025). Enhancing Gate Control and Mitigating Short Channel Effects in 20-50 nm Channel Length Amorphous Oxide Thin-Film Transistors.. ACS Nano. https://doi.org/10.1021/acsnano.5c10260

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europe-pmc · retrieved 2026-09-27T02:21:14.573Z