High-Density Sub-10 nm Silicon Nanowires Fabricated via Directed Self-Assembly and Sequential Infiltration Synthesis Synergistic Patterning for Multiple Applications.
- DOI
- 10.1021/acsnano.5c16910
- Published
- 2026 Mar 10
- Container
- ACS nano
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsnano.5c16910,
title = {High-Density Sub-10 nm Silicon Nanowires Fabricated via Directed Self-Assembly and Sequential Infiltration Synthesis Synergistic Patterning for Multiple Applications.},
author = {Chen G and Xie H and Luo J and Tao S and Bao W and Qu Y and Gao S and Tian S and Xu X and Han S and Cao Z and Chen Y and Xiong S and Wan J},
year = {2026},
journal = {ACS nano},
doi = {10.1021/acsnano.5c16910},
url = {https://doi.org/10.1021/acsnano.5c16910}
}RIS
TY - JOUR TI - High-Density Sub-10 nm Silicon Nanowires Fabricated via Directed Self-Assembly and Sequential Infiltration Synthesis Synergistic Patterning for Multiple Applications. AU - Chen G AU - Xie H AU - Luo J AU - Tao S AU - Bao W AU - Qu Y AU - Gao S AU - Tian S AU - Xu X AU - Han S AU - Cao Z AU - Chen Y AU - Xiong S AU - Wan J PY - 2026 JO - ACS nano DO - 10.1021/acsnano.5c16910 UR - https://doi.org/10.1021/acsnano.5c16910 ER -
APA
G, C., H, X., J, L., S, T., W, B., Y, Q., S, G., S, T., X, X., S, H., Z, C., Y, C., S, X., & J, W. (2026). High-Density Sub-10 nm Silicon Nanowires Fabricated via Directed Self-Assembly and Sequential Infiltration Synthesis Synergistic Patterning for Multiple Applications.. ACS nano. https://doi.org/10.1021/acsnano.5c16910
Source records
- pubmed · retrieved 2026-11-10T14:13:53.444Z