Long-Term Operational Stability of Dual-Gated ITO/HfO(2) Field-Effect Transistors via Full Top-Gate Coverage: A Comprehensive Bias-Stress Mapping.
- DOI
- 10.1021/acsnano.5c17437
- Published
- 2026 Mar 17
- Container
- ACS nano
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsnano.5c17437,
title = {Long-Term Operational Stability of Dual-Gated ITO/HfO(2) Field-Effect Transistors via Full Top-Gate Coverage: A Comprehensive Bias-Stress Mapping.},
author = {Huang J and Sarkar A and Chai Y and Lv Y and Cai H and Wu Y and Roy T and Illarionov YY},
year = {2026},
journal = {ACS nano},
doi = {10.1021/acsnano.5c17437},
url = {https://doi.org/10.1021/acsnano.5c17437}
}RIS
TY - JOUR TI - Long-Term Operational Stability of Dual-Gated ITO/HfO(2) Field-Effect Transistors via Full Top-Gate Coverage: A Comprehensive Bias-Stress Mapping. AU - Huang J AU - Sarkar A AU - Chai Y AU - Lv Y AU - Cai H AU - Wu Y AU - Roy T AU - Illarionov YY PY - 2026 JO - ACS nano DO - 10.1021/acsnano.5c17437 UR - https://doi.org/10.1021/acsnano.5c17437 ER -
APA
J, H., A, S., Y, C., Y, L., H, C., Y, W., T, R., & YY, I. (2026). Long-Term Operational Stability of Dual-Gated ITO/HfO(2) Field-Effect Transistors via Full Top-Gate Coverage: A Comprehensive Bias-Stress Mapping.. ACS nano. https://doi.org/10.1021/acsnano.5c17437
Source records
- pubmed · retrieved 2026-09-26T14:14:29.614Z