Correction to "Hf/Zr Superlattice-Based High-κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS".
- DOI
- 10.1021/acsnano.6c01243
- Published
- 2026 Mar 3
- Container
- ACS nano
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1021/acsnano.6c01243,
title = {Correction to "Hf/Zr Superlattice-Based High-κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS".},
author = {Song T and Kang S and Kuo YH and Chen J and Fernandes L and Afroze N and Tian M and Baac HW and Shin C and Khan AI},
year = {2026},
journal = {ACS nano},
doi = {10.1021/acsnano.6c01243},
url = {https://doi.org/10.1021/acsnano.6c01243}
}RIS
TY - JOUR TI - Correction to "Hf/Zr Superlattice-Based High-κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS". AU - Song T AU - Kang S AU - Kuo YH AU - Chen J AU - Fernandes L AU - Afroze N AU - Tian M AU - Baac HW AU - Shin C AU - Khan AI PY - 2026 JO - ACS nano DO - 10.1021/acsnano.6c01243 UR - https://doi.org/10.1021/acsnano.6c01243 ER -
APA
T, S., S, K., YH, K., J, C., L, F., N, A., M, T., HW, B., C, S., & AI, K. (2026). Correction to "Hf/Zr Superlattice-Based High-κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS".. ACS nano. https://doi.org/10.1021/acsnano.6c01243
Source records
- pubmed · retrieved 2026-09-27T01:26:56.752Z