Enhancing Hole Mobility in Monolayer WSe(2) p-Type Field-Effect Transistors via Process-Induced Compression.
- DOI
- 10.1021/acsnano.6c03313
- Published
- 2026 Jun 30
- Container
- ACS nano
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsnano.6c03313,
title = {Enhancing Hole Mobility in Monolayer WSe(2) p-Type Field-Effect Transistors via Process-Induced Compression.},
author = {Zhao HL and Ta-Seen Afrid SM and Yoon D and Martin Z and Islam Z and Chen S and Zhang Y and Huang PY and Rakheja S and van der Zande AM},
year = {2026},
journal = {ACS nano},
doi = {10.1021/acsnano.6c03313},
url = {https://doi.org/10.1021/acsnano.6c03313}
}RIS
TY - JOUR TI - Enhancing Hole Mobility in Monolayer WSe(2) p-Type Field-Effect Transistors via Process-Induced Compression. AU - Zhao HL AU - Ta-Seen Afrid SM AU - Yoon D AU - Martin Z AU - Islam Z AU - Chen S AU - Zhang Y AU - Huang PY AU - Rakheja S AU - van der Zande AM PY - 2026 JO - ACS nano DO - 10.1021/acsnano.6c03313 UR - https://doi.org/10.1021/acsnano.6c03313 ER -
APA
HL, Z., SM, T. A., D, Y., Z, M., Z, I., S, C., Y, Z., PY, H., S, R., & AM, V. D. Z. (2026). Enhancing Hole Mobility in Monolayer WSe(2) p-Type Field-Effect Transistors via Process-Induced Compression.. ACS nano. https://doi.org/10.1021/acsnano.6c03313
Source records
- pubmed · retrieved 2026-09-25T10:56:50.541Z