Reconfigurable Logic-in-Memory Oxide Transistors Enabled by Transferable Ferroelectric HZO
- DOI
- 10.1021/acsnano.6c04397
- Published
- 2026-06-30
- Container
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsnano.6c04397,
title = {Reconfigurable Logic-in-Memory Oxide Transistors Enabled by Transferable Ferroelectric HZO},
author = {Chang-Chang Huang and Bo-Cia Chen and Hao-Tse Lee and Rahul and Yung-Chi Su and Chien-Ting Wu and Chien-Chung Hsu and Yen-Lin Huang and Jan-Chi Yang and Der-Hsien Lien},
year = {2026},
journal = {ACS Nano},
doi = {10.1021/acsnano.6c04397},
url = {https://doi.org/10.1021/acsnano.6c04397}
}RIS
TY - JOUR TI - Reconfigurable Logic-in-Memory Oxide Transistors Enabled by Transferable Ferroelectric HZO AU - Chang-Chang Huang AU - Bo-Cia Chen AU - Hao-Tse Lee AU - Rahul AU - Yung-Chi Su AU - Chien-Ting Wu AU - Chien-Chung Hsu AU - Yen-Lin Huang AU - Jan-Chi Yang AU - Der-Hsien Lien PY - 2026 JO - ACS Nano DO - 10.1021/acsnano.6c04397 UR - https://doi.org/10.1021/acsnano.6c04397 ER -
APA
Huang, C., Chen, B., Lee, H., Rahul, Su, Y., Wu, C., Hsu, C., Huang, Y., Yang, J., & Lien, D. (2026). Reconfigurable Logic-in-Memory Oxide Transistors Enabled by Transferable Ferroelectric HZO. ACS Nano. https://doi.org/10.1021/acsnano.6c04397
Source records
- crossref · retrieved 2026-09-25T13:55:56.889Z