InF3 Surface Passivation on InAs Quantum Dots Enhances Photoluminescence and Reduces Trap-Induced Dark Current in Shortwave Infrared Photodetectors.
- DOI
- 10.1021/acsnano.6c06196
- Published
- 2026 Sep 1
- Container
- ACS nano
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsnano.6c06196,
title = {InF3 Surface Passivation on InAs Quantum Dots Enhances Photoluminescence and Reduces Trap-Induced Dark Current in Shortwave Infrared Photodetectors.},
author = {Chen H and Claus BB and Song W and Vildanova M and van der Poll LM and van Aken A and Vogel YB and Bai J and Hai Y and Kose YM and Pintor Monroy MI and Protesescu L and Savenije TJ and Hens Z and Lieberman I and Houtepen AJ},
year = {2026},
journal = {ACS nano},
doi = {10.1021/acsnano.6c06196},
url = {https://doi.org/10.1021/acsnano.6c06196}
}RIS
TY - JOUR TI - InF3 Surface Passivation on InAs Quantum Dots Enhances Photoluminescence and Reduces Trap-Induced Dark Current in Shortwave Infrared Photodetectors. AU - Chen H AU - Claus BB AU - Song W AU - Vildanova M AU - van der Poll LM AU - van Aken A AU - Vogel YB AU - Bai J AU - Hai Y AU - Kose YM AU - Pintor Monroy MI AU - Protesescu L AU - Savenije TJ AU - Hens Z AU - Lieberman I AU - Houtepen AJ PY - 2026 JO - ACS nano DO - 10.1021/acsnano.6c06196 UR - https://doi.org/10.1021/acsnano.6c06196 ER -
APA
H, C., BB, C., W, S., M, V., LM, V. D. P., A, V. A., YB, V., J, B., Y, H., YM, K., MI, P. M., L, P., TJ, S., Z, H., I, L., & AJ, H. (2026). InF3 Surface Passivation on InAs Quantum Dots Enhances Photoluminescence and Reduces Trap-Induced Dark Current in Shortwave Infrared Photodetectors.. ACS nano. https://doi.org/10.1021/acsnano.6c06196
Source records
- pubmed · retrieved 2026-09-26T02:41:59.187Z