Seed Layer Engineering for Effective Charge Transfer Doping of MoS2 Transistors.

Sharma S, Yang SH, Jawa H, Yuvraj R, Nguyen B, Niu C, Radhakrishnan S, Tripathi S, Lin D, Lockhart de la Rosa CJ, Morin P, Zemlyanov D, Iacopi F, Chen Z, Appenzeller J, Beechem TE

Open source

DOI: 10.1021/acsnano.6c07322
Published: 2026 Aug 11
Container: ACS nano
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsnano.6c07322,
  title = {Seed Layer Engineering for Effective Charge Transfer Doping of MoS2 Transistors.},
  author = {Sharma S and Yang SH and Jawa H and Yuvraj R and Nguyen B and Niu C and Radhakrishnan S and Tripathi S and Lin D and Lockhart de la Rosa CJ and Morin P and Zemlyanov D and Iacopi F and Chen Z and Appenzeller J and Beechem TE},
  year = {2026},
  journal = {ACS nano},
  doi = {10.1021/acsnano.6c07322},
  url = {https://doi.org/10.1021/acsnano.6c07322}
}

RIS

TY  - JOUR
TI  - Seed Layer Engineering for Effective Charge Transfer Doping of MoS2 Transistors.
AU  - Sharma S
AU  - Yang SH
AU  - Jawa H
AU  - Yuvraj R
AU  - Nguyen B
AU  - Niu C
AU  - Radhakrishnan S
AU  - Tripathi S
AU  - Lin D
AU  - Lockhart de la Rosa CJ
AU  - Morin P
AU  - Zemlyanov D
AU  - Iacopi F
AU  - Chen Z
AU  - Appenzeller J
AU  - Beechem TE
PY  - 2026
JO  - ACS nano
DO  - 10.1021/acsnano.6c07322
UR  - https://doi.org/10.1021/acsnano.6c07322
ER  -

APA

S, S., SH, Y., H, J., R, Y., B, N., C, N., S, R., S, T., D, L., CJ, L. D. L. R., P, M., D, Z., F, I., Z, C., J, A., & TE, B. (2026). Seed Layer Engineering for Effective Charge Transfer Doping of MoS2 Transistors.. ACS nano. https://doi.org/10.1021/acsnano.6c07322

Source records

pubmed · retrieved 2026-09-25T17:25:59.707Z