Self-Trapped Excitons and Room-Temperature Ferroelectricity in Quasi-One-Dimensional Semiconductor BiSeBr for Polarization-Sensitive Optoelectronics.

Zhu W, Zhen W, Niu R, Miao W, Meng X, Zhu W, Zhou J, Xia J, Wang Y, Zhang C

Open source

DOI
10.1021/acsnano.6c08218
Published
2026 Aug 18
Container
ACS nano
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1021/acsnano.6c08218,
  title = {Self-Trapped Excitons and Room-Temperature Ferroelectricity in Quasi-One-Dimensional Semiconductor BiSeBr for Polarization-Sensitive Optoelectronics.},
  author = {Zhu W and Zhen W and Niu R and Miao W and Meng X and Zhu W and Zhou J and Xia J and Wang Y and Zhang C},
  year = {2026},
  journal = {ACS nano},
  doi = {10.1021/acsnano.6c08218},
  url = {https://doi.org/10.1021/acsnano.6c08218}
}

RIS

TY  - JOUR
TI  - Self-Trapped Excitons and Room-Temperature Ferroelectricity in Quasi-One-Dimensional Semiconductor BiSeBr for Polarization-Sensitive Optoelectronics.
AU  - Zhu W
AU  - Zhen W
AU  - Niu R
AU  - Miao W
AU  - Meng X
AU  - Zhu W
AU  - Zhou J
AU  - Xia J
AU  - Wang Y
AU  - Zhang C
PY  - 2026
JO  - ACS nano
DO  - 10.1021/acsnano.6c08218
UR  - https://doi.org/10.1021/acsnano.6c08218
ER  - 

APA

W, Z., W, Z., R, N., W, M., X, M., W, Z., J, Z., J, X., Y, W., & C, Z. (2026). Self-Trapped Excitons and Room-Temperature Ferroelectricity in Quasi-One-Dimensional Semiconductor BiSeBr for Polarization-Sensitive Optoelectronics.. ACS nano. https://doi.org/10.1021/acsnano.6c08218

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