Displacement-Field-Induced Ionization of Defect States in High-Quality hBN
- DOI
- 10.1021/acsnano.6c11124
- Published
- 2026-10-22
- Container
- ACS Nano
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsnano.6c11124,
title = {Displacement-Field-Induced
Ionization of Defect States
in High-Quality hBN},
author = {Ilia Begichev and Daria Belotcerkovtceva and Iakov Reznikov and Sergey Slizovskiy and Weijie Lu and Nansi Zhou and Ian Babich and Makars Šiškins and Kostya S. Novoselov and Vladimir I. Fal’ko and Kenji Watanabe and Takashi Taniguchi and Alexey I. Berdyugin},
year = {2026},
journal = {ACS Nano},
doi = {10.1021/acsnano.6c11124},
url = {https://doi.org/10.1021/acsnano.6c11124}
}RIS
TY - JOUR TI - Displacement-Field-Induced Ionization of Defect States in High-Quality hBN AU - Ilia Begichev AU - Daria Belotcerkovtceva AU - Iakov Reznikov AU - Sergey Slizovskiy AU - Weijie Lu AU - Nansi Zhou AU - Ian Babich AU - Makars Šiškins AU - Kostya S. Novoselov AU - Vladimir I. Fal’ko AU - Kenji Watanabe AU - Takashi Taniguchi AU - Alexey I. Berdyugin PY - 2026 JO - ACS Nano DO - 10.1021/acsnano.6c11124 UR - https://doi.org/10.1021/acsnano.6c11124 ER -
APA
Begichev, I., Belotcerkovtceva, D., Reznikov, I., Slizovskiy, S., Lu, W., Zhou, N., Babich, I., Šiškins, M., Novoselov, K. S., Fal’ko, V. I., Watanabe, K., Taniguchi, T., & Berdyugin, A. I. (2026). Displacement-Field-Induced Ionization of Defect States in High-Quality hBN. ACS Nano. https://doi.org/10.1021/acsnano.6c11124
Source records
- crossref · retrieved 2026-11-06T07:33:32.370Z