Monolithic 3D Stacked Carbon Nanotube/Indium-Tin-Oxide Complementary Transistors for High-Frequency Logic and Sense Amplifier Integration with Memory.
- DOI
- 10.1021/acsnano.6c11662
- Published
- 2026 Nov 3
- Container
- ACS nano
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsnano.6c11662,
title = {Monolithic 3D Stacked Carbon Nanotube/Indium-Tin-Oxide Complementary Transistors for High-Frequency Logic and Sense Amplifier Integration with Memory.},
author = {Liu R and Zhao Y and Zhu S and Fu T and Wang Z and Zhu Y and Wang C and Peng L and Hu Q},
year = {2026},
journal = {ACS nano},
doi = {10.1021/acsnano.6c11662},
url = {https://doi.org/10.1021/acsnano.6c11662}
}RIS
TY - JOUR TI - Monolithic 3D Stacked Carbon Nanotube/Indium-Tin-Oxide Complementary Transistors for High-Frequency Logic and Sense Amplifier Integration with Memory. AU - Liu R AU - Zhao Y AU - Zhu S AU - Fu T AU - Wang Z AU - Zhu Y AU - Wang C AU - Peng L AU - Hu Q PY - 2026 JO - ACS nano DO - 10.1021/acsnano.6c11662 UR - https://doi.org/10.1021/acsnano.6c11662 ER -
APA
R, L., Y, Z., S, Z., T, F., Z, W., Y, Z., C, W., L, P., & Q, H. (2026). Monolithic 3D Stacked Carbon Nanotube/Indium-Tin-Oxide Complementary Transistors for High-Frequency Logic and Sense Amplifier Integration with Memory.. ACS nano. https://doi.org/10.1021/acsnano.6c11662
Source records
- pubmed · retrieved 2026-11-10T14:29:13.861Z