Exceptionally Matched p-SiNW/n-IGZO Complementary Field-Effect Transistors for Monolithic 3D Logic

Le Weng, Wentao Qian, Wei Liao, Junzhuan Wang, Zhinong Yu, Linwei Yu

Open source

DOI: 10.1021/acsnano.6c16739
Published: 2026-10-28
Container: ACS Nano
Publisher: American Chemical Society (ACS)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsnano.6c16739,
  title = {Exceptionally Matched
p-SiNW/n-IGZO Complementary
Field-Effect Transistors for Monolithic 3D Logic},
  author = {Le Weng and Wentao Qian and Wei Liao and Junzhuan Wang and Zhinong Yu and Linwei Yu},
  year = {2026},
  journal = {ACS Nano},
  doi = {10.1021/acsnano.6c16739},
  url = {https://doi.org/10.1021/acsnano.6c16739}
}

RIS

TY  - JOUR
TI  - Exceptionally Matched
p-SiNW/n-IGZO Complementary
Field-Effect Transistors for Monolithic 3D Logic
AU  - Le Weng
AU  - Wentao Qian
AU  - Wei Liao
AU  - Junzhuan Wang
AU  - Zhinong Yu
AU  - Linwei Yu
PY  - 2026
JO  - ACS Nano
DO  - 10.1021/acsnano.6c16739
UR  - https://doi.org/10.1021/acsnano.6c16739
ER  -

APA

Weng, L., Qian, W., Liao, W., Wang, J., Yu, Z., & Yu, L. (2026). Exceptionally Matched p-SiNW/n-IGZO Complementary Field-Effect Transistors for Monolithic 3D Logic. ACS Nano. https://doi.org/10.1021/acsnano.6c16739

Source records

crossref · retrieved 2026-11-11T01:56:53.409Z