Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography.

Ryu Cho YK, Rawlings CD, Wolf H, Spieser M, Bisig S, Reidt S, Sousa M, Khanal SR, Jacobs TDB, Knoll AW

DOI: 10.1021/acsnano.7b06307
Published: 2017 Dec 26
Container: ACS nano
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1021/acsnano.7b06307,
  title = {Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography.},
  author = {Ryu Cho YK and Rawlings CD and Wolf H and Spieser M and Bisig S and Reidt S and Sousa M and Khanal SR and Jacobs TDB and Knoll AW},
  year = {2017},
  journal = {ACS nano},
  doi = {10.1021/acsnano.7b06307},
  url = {https://doi.org/10.1021/acsnano.7b06307}
}

RIS

TY  - JOUR
TI  - Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography.
AU  - Ryu Cho YK
AU  - Rawlings CD
AU  - Wolf H
AU  - Spieser M
AU  - Bisig S
AU  - Reidt S
AU  - Sousa M
AU  - Khanal SR
AU  - Jacobs TDB
AU  - Knoll AW
PY  - 2017
JO  - ACS nano
DO  - 10.1021/acsnano.7b06307
UR  - https://doi.org/10.1021/acsnano.7b06307
ER  -

APA

YK, R. C., CD, R., H, W., M, S., S, B., S, R., M, S., SR, K., TDB, J., & AW, K. (2017). Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography.. ACS nano. https://doi.org/10.1021/acsnano.7b06307

Source records

pubmed · retrieved 2026-09-26T06:49:22.286Z