Introduction of Tunneling Oxide and Oxidation Process Effects for Reliable Si-Compatible Resistive-Switching Random-Access Memory

Yeji Lee, Soomin Kim, Seongmin Kim, Sungjun Kim, Seongjae Cho

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DOI: 10.1021/acsnanoscienceau.6c00003
Published: 2026-04-09
Container: ACS Nanoscience Au
Publisher: American Chemical Society (ACS)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/acsnanoscienceau.6c00003,
  title = {Introduction
of Tunneling Oxide and Oxidation Process
Effects for Reliable Si-Compatible Resistive-Switching Random-Access
Memory},
  author = {Yeji Lee and Soomin Kim and Seongmin Kim and Sungjun Kim and Seongjae Cho},
  year = {2026},
  journal = {ACS Nanoscience Au},
  doi = {10.1021/acsnanoscienceau.6c00003},
  url = {https://doi.org/10.1021/acsnanoscienceau.6c00003}
}

RIS

TY  - JOUR
TI  - Introduction
of Tunneling Oxide and Oxidation Process
Effects for Reliable Si-Compatible Resistive-Switching Random-Access
Memory
AU  - Yeji Lee
AU  - Soomin Kim
AU  - Seongmin Kim
AU  - Sungjun Kim
AU  - Seongjae Cho
PY  - 2026
JO  - ACS Nanoscience Au
DO  - 10.1021/acsnanoscienceau.6c00003
UR  - https://doi.org/10.1021/acsnanoscienceau.6c00003
ER  -

APA

Lee, Y., Kim, S., Kim, S., Kim, S., & Cho, S. (2026). Introduction of Tunneling Oxide and Oxidation Process Effects for Reliable Si-Compatible Resistive-Switching Random-Access Memory. ACS Nanoscience Au. https://doi.org/10.1021/acsnanoscienceau.6c00003

Source records

crossref · retrieved 2026-09-27T01:29:15.182Z