Investigation of Different Oxygen Partial Pressures on MgGa<sub>2</sub>O<sub>4</sub>-Resistive Random-Access Memory
- DOI
- 10.1021/acsomega.2c04222
- Published
- 2023-01-16
- Container
- ACS Omega
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsomega.2c04222,
title = {Investigation of Different Oxygen Partial Pressures on MgGa<sub>2</sub>O<sub>4</sub>-Resistive Random-Access Memory},
author = {Yu-Neng Kao and Wei-Lun Huang and Sheng-Po Chang and Wei-Chih Lai and Shoou-Jinn Chang},
year = {2023},
journal = {ACS Omega},
doi = {10.1021/acsomega.2c04222},
url = {https://doi.org/10.1021/acsomega.2c04222}
}RIS
TY - JOUR TI - Investigation of Different Oxygen Partial Pressures on MgGa<sub>2</sub>O<sub>4</sub>-Resistive Random-Access Memory AU - Yu-Neng Kao AU - Wei-Lun Huang AU - Sheng-Po Chang AU - Wei-Chih Lai AU - Shoou-Jinn Chang PY - 2023 JO - ACS Omega DO - 10.1021/acsomega.2c04222 UR - https://doi.org/10.1021/acsomega.2c04222 ER -
APA
Kao, Y., Huang, W., Chang, S., Lai, W., & Chang, S. (2023). Investigation of Different Oxygen Partial Pressures on MgGa<sub>2</sub>O<sub>4</sub>-Resistive Random-Access Memory. ACS Omega. https://doi.org/10.1021/acsomega.2c04222
Source records
- crossref · retrieved 2026-11-08T12:34:32.887Z