Oxygen-Plasma Defect Engineering of Epitaxial Graphene on 4H-SiC for Enhanced NO<sub>2</sub> Sensing.
- DOI
- 10.1021/acsomega.5c09420
- Published
- 2025-12-17
- Container
- ACS Omega
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1021/acsomega.5c09420,
title = {Oxygen-Plasma Defect Engineering of Epitaxial Graphene on 4H-SiC for Enhanced NO\<sub\>2\</sub\> Sensing.},
author = {Trinh XT and Nguyen AT and Nguyen TTH and Dang TQ and Tran HD and Nguyen PT and Dao TM and Truong LH and Le CQ and Pham TT and Nguyen-Si V and Ngo HT.},
year = {2025},
journal = {ACS Omega},
doi = {10.1021/acsomega.5c09420},
url = {https://doi.org/10.1021/acsomega.5c09420}
}RIS
TY - JOUR TI - Oxygen-Plasma Defect Engineering of Epitaxial Graphene on 4H-SiC for Enhanced NO<sub>2</sub> Sensing. AU - Trinh XT AU - Nguyen AT AU - Nguyen TTH AU - Dang TQ AU - Tran HD AU - Nguyen PT AU - Dao TM AU - Truong LH AU - Le CQ AU - Pham TT AU - Nguyen-Si V AU - Ngo HT. PY - 2025 JO - ACS Omega DO - 10.1021/acsomega.5c09420 UR - https://doi.org/10.1021/acsomega.5c09420 ER -
APA
XT, T., AT, N., TTH, N., TQ, D., HD, T., PT, N., TM, D., LH, T., CQ, L., TT, P., V, N., & HT., N. (2025). Oxygen-Plasma Defect Engineering of Epitaxial Graphene on 4H-SiC for Enhanced NO<sub>2</sub> Sensing.. ACS Omega. https://doi.org/10.1021/acsomega.5c09420
Source records
- europe-pmc · retrieved 2026-09-27T10:29:31.308Z
- doaj · retrieved 2026-09-27T10:29:31.325Z