Optical Access to the Electronic Nature of Device-Relevant Dislocations in High-Purity Semi-Insulating SiC.

Hsu HM, Kurniawan IS, Sevilla RC, Soebroto RJ, Chang SH, Tsai T, Huang HY, Li WC, Yuan CT

Open source

DOI
10.1021/acsomega.6c02027
Published
2026 Jul 7
Container
ACS omega
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1021/acsomega.6c02027,
  title = {Optical Access to the Electronic Nature of Device-Relevant Dislocations in High-Purity Semi-Insulating SiC.},
  author = {Hsu HM and Kurniawan IS and Sevilla RC and Soebroto RJ and Chang SH and Tsai T and Huang HY and Li WC and Yuan CT},
  year = {2026},
  journal = {ACS omega},
  doi = {10.1021/acsomega.6c02027},
  url = {https://doi.org/10.1021/acsomega.6c02027}
}

RIS

TY  - JOUR
TI  - Optical Access to the Electronic Nature of Device-Relevant Dislocations in High-Purity Semi-Insulating SiC.
AU  - Hsu HM
AU  - Kurniawan IS
AU  - Sevilla RC
AU  - Soebroto RJ
AU  - Chang SH
AU  - Tsai T
AU  - Huang HY
AU  - Li WC
AU  - Yuan CT
PY  - 2026
JO  - ACS omega
DO  - 10.1021/acsomega.6c02027
UR  - https://doi.org/10.1021/acsomega.6c02027
ER  -

APA

HM, H., IS, K., RC, S., RJ, S., SH, C., T, T., HY, H., WC, L., & CT, Y. (2026). Optical Access to the Electronic Nature of Device-Relevant Dislocations in High-Purity Semi-Insulating SiC.. ACS omega. https://doi.org/10.1021/acsomega.6c02027

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