Mechanistic Study of Low-Temperature Plasma-Activated InP/Al2O3/SOI Direct Wafer Bonding for High Bonding Energy
- DOI
- 10.1021/acsomega.6c05801
- Published
- 2026-08-20
- Container
- ACS Omega
- Publisher
- American Chemical Society (ACS)
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1021/acsomega.6c05801,
title = {Mechanistic Study
of Low-Temperature Plasma-Activated
InP/Al2O3/SOI Direct Wafer Bonding for High
Bonding Energy},
author = {Cheng Peng and Yihao Meng and Siwei Sun and Erni Shao and Qiushi Kang and Renxi Jin and Wenxuan Ma and Yetong Zhang and Haiyun Xue and Liqiang Cao and Chenxi Wang and Qidong Wang},
year = {2026},
journal = {ACS Omega},
doi = {10.1021/acsomega.6c05801},
url = {https://doi.org/10.1021/acsomega.6c05801}
}RIS
TY - JOUR TI - Mechanistic Study of Low-Temperature Plasma-Activated InP/Al2O3/SOI Direct Wafer Bonding for High Bonding Energy AU - Cheng Peng AU - Yihao Meng AU - Siwei Sun AU - Erni Shao AU - Qiushi Kang AU - Renxi Jin AU - Wenxuan Ma AU - Yetong Zhang AU - Haiyun Xue AU - Liqiang Cao AU - Chenxi Wang AU - Qidong Wang PY - 2026 JO - ACS Omega DO - 10.1021/acsomega.6c05801 UR - https://doi.org/10.1021/acsomega.6c05801 ER -
APA
Peng, C., Meng, Y., Sun, S., Shao, E., Kang, Q., Jin, R., Ma, W., Zhang, Y., Xue, H., Cao, L., Wang, C., & Wang, Q. (2026). Mechanistic Study of Low-Temperature Plasma-Activated InP/Al2O3/SOI Direct Wafer Bonding for High Bonding Energy. ACS Omega. https://doi.org/10.1021/acsomega.6c05801
Source records
- crossref · retrieved 2026-11-10T13:10:50.545Z