Theoretical Study of the Electronic States of Si<sub>2</sub>C

A. Spielfiedel, S. Carter, N. Feautrier, G. Chambaud, P. Rosmus

Open source

DOI: 10.1021/jp960191l
Published: 1996-01-01
Container: The Journal of Physical Chemistry
Publisher: American Chemical Society (ACS)
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1021/jp960191l,
  title = {Theoretical Study of the Electronic States of Si<sub>2</sub>C},
  author = {A. Spielfiedel and S. Carter and N. Feautrier and G. Chambaud and P. Rosmus},
  year = {1996},
  journal = {The Journal of Physical Chemistry},
  doi = {10.1021/jp960191l},
  url = {https://doi.org/10.1021/jp960191l}
}

RIS

TY  - JOUR
TI  - Theoretical Study of the Electronic States of Si<sub>2</sub>C
AU  - A. Spielfiedel
AU  - S. Carter
AU  - N. Feautrier
AU  - G. Chambaud
AU  - P. Rosmus
PY  - 1996
JO  - The Journal of Physical Chemistry
DO  - 10.1021/jp960191l
UR  - https://doi.org/10.1021/jp960191l
ER  -

APA

Spielfiedel, A., Carter, S., Feautrier, N., Chambaud, G., & Rosmus, P. (1996). Theoretical Study of the Electronic States of Si<sub>2</sub>C. The Journal of Physical Chemistry. https://doi.org/10.1021/jp960191l

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crossref · retrieved 2026-09-26T20:57:39.992Z