Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays.
- DOI
- 10.1038/nmat3256
- Published
- 2012 Feb 26
- Container
- Nature materials
- Publisher
- Not recorded
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1038/nmat3256,
title = {Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays.},
author = {Jeon S and Ahn SE and Song I and Kim CJ and Chung UI and Lee E and Yoo I and Nathan A and Lee S and Robertson J and Kim K},
year = {2012},
journal = {Nature materials},
doi = {10.1038/nmat3256},
url = {https://doi.org/10.1038/nmat3256}
}RIS
TY - JOUR TI - Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays. AU - Jeon S AU - Ahn SE AU - Song I AU - Kim CJ AU - Chung UI AU - Lee E AU - Yoo I AU - Nathan A AU - Lee S AU - Robertson J AU - Kim K PY - 2012 JO - Nature materials DO - 10.1038/nmat3256 UR - https://doi.org/10.1038/nmat3256 ER -
APA
S, J., SE, A., I, S., CJ, K., UI, C., E, L., I, Y., A, N., S, L., J, R., & K, K. (2012). Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays.. Nature materials. https://doi.org/10.1038/nmat3256
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- pubmed · retrieved 2026-11-10T06:59:18.912Z