Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
- DOI
- 10.1038/nmat3256
- Published
- 2012-02-26
- Container
- Nature Materials
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1038/nmat3256,
title = {Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays},
author = {Sanghun Jeon and Seung-Eon Ahn and Ihun Song and Chang Jung Kim and U-In Chung and Eunha Lee and Inkyung Yoo and Arokia Nathan and Sungsik Lee and Khashayar Ghaffarzadeh and John Robertson and Kinam Kim},
year = {2012},
journal = {Nature Materials},
doi = {10.1038/nmat3256},
url = {https://doi.org/10.1038/nmat3256}
}RIS
TY - JOUR TI - Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays AU - Sanghun Jeon AU - Seung-Eon Ahn AU - Ihun Song AU - Chang Jung Kim AU - U-In Chung AU - Eunha Lee AU - Inkyung Yoo AU - Arokia Nathan AU - Sungsik Lee AU - Khashayar Ghaffarzadeh AU - John Robertson AU - Kinam Kim PY - 2012 JO - Nature Materials DO - 10.1038/nmat3256 UR - https://doi.org/10.1038/nmat3256 ER -
APA
Jeon, S., Ahn, S., Song, I., Kim, C. J., Chung, U., Lee, E., Yoo, I., Nathan, A., Lee, S., Ghaffarzadeh, K., Robertson, J., & Kim, K. (2012). Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays. Nature Materials. https://doi.org/10.1038/nmat3256
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- crossref · retrieved 2026-09-25T19:18:33.807Z