Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy.
- DOI
- 10.1038/s41377-025-01911-0
- Published
- 2025 Jun 20
- Container
- Light, science & applications
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1038/s41377-025-01911-0,
title = {Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy.},
author = {Murakami F and Ueyama S and Suzuki K and Kim I and Baek I and Bae S and Sung D and Lee M and Ryu S and Yang Y and Tonouchi M},
year = {2025},
journal = {Light, science \& applications},
doi = {10.1038/s41377-025-01911-0},
url = {https://doi.org/10.1038/s41377-025-01911-0}
}RIS
TY - JOUR TI - Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy. AU - Murakami F AU - Ueyama S AU - Suzuki K AU - Kim I AU - Baek I AU - Bae S AU - Sung D AU - Lee M AU - Ryu S AU - Yang Y AU - Tonouchi M PY - 2025 JO - Light, science & applications DO - 10.1038/s41377-025-01911-0 UR - https://doi.org/10.1038/s41377-025-01911-0 ER -
APA
F, M., S, U., K, S., I, K., I, B., S, B., D, S., M, L., S, R., Y, Y., & M, T. (2025). Non-contact and nanometer-scale measurement of PN junction depth buried in Si wafers using terahertz emission spectroscopy.. Light, science & applications. https://doi.org/10.1038/s41377-025-01911-0
Source records
- pubmed · retrieved 2026-09-26T20:51:56.081Z