Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications.

Gao X, Huang Y, Wang R, Sun Y, Wang L

DOI: 10.1038/s41377-025-02052-0
Published: 2026 Mar 3
Container: Light, science & applications
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1038/s41377-025-02052-0,
  title = {Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications.},
  author = {Gao X and Huang Y and Wang R and Sun Y and Wang L},
  year = {2026},
  journal = {Light, science \& applications},
  doi = {10.1038/s41377-025-02052-0},
  url = {https://doi.org/10.1038/s41377-025-02052-0}
}

RIS

TY  - JOUR
TI  - Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications.
AU  - Gao X
AU  - Huang Y
AU  - Wang R
AU  - Sun Y
AU  - Wang L
PY  - 2026
JO  - Light, science & applications
DO  - 10.1038/s41377-025-02052-0
UR  - https://doi.org/10.1038/s41377-025-02052-0
ER  -

APA

X, G., Y, H., R, W., Y, S., & L, W. (2026). Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications.. Light, science & applications. https://doi.org/10.1038/s41377-025-02052-0

Source records

pubmed · retrieved 2026-11-10T12:59:13.537Z