Defect-mediated generation-recombination dynamics governing conductance response in floating-body transistors.

Kwak B, Han C, You H, Hong W, Choi J, Cho Y, Kim S, Shin W, Kwon D

DOI: 10.1038/s41378-026-01393-z
Published: 2026 Aug 4
Container: Microsystems & nanoengineering
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1038/s41378-026-01393-z,
  title = {Defect-mediated generation-recombination dynamics governing conductance response in floating-body transistors.},
  author = {Kwak B and Han C and You H and Hong W and Choi J and Cho Y and Kim S and Shin W and Kwon D},
  year = {2026},
  journal = {Microsystems \& nanoengineering},
  doi = {10.1038/s41378-026-01393-z},
  url = {https://doi.org/10.1038/s41378-026-01393-z}
}

RIS

TY  - JOUR
TI  - Defect-mediated generation-recombination dynamics governing conductance response in floating-body transistors.
AU  - Kwak B
AU  - Han C
AU  - You H
AU  - Hong W
AU  - Choi J
AU  - Cho Y
AU  - Kim S
AU  - Shin W
AU  - Kwon D
PY  - 2026
JO  - Microsystems & nanoengineering
DO  - 10.1038/s41378-026-01393-z
UR  - https://doi.org/10.1038/s41378-026-01393-z
ER  -

APA

B, K., C, H., H, Y., W, H., J, C., Y, C., S, K., W, S., & D, K. (2026). Defect-mediated generation-recombination dynamics governing conductance response in floating-body transistors.. Microsystems & nanoengineering. https://doi.org/10.1038/s41378-026-01393-z

Source records

pubmed · retrieved 2026-09-27T14:06:07.967Z