Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts.
- DOI
- 10.1038/s41467-025-65695-y
- Published
- 2025 Nov 27
- Container
- Nature communications
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1038/s41467-025-65695-y,
title = {Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts.},
author = {Xiang Z and Luo JW and Li SS},
year = {2025},
journal = {Nature communications},
doi = {10.1038/s41467-025-65695-y},
url = {https://doi.org/10.1038/s41467-025-65695-y}
}RIS
TY - JOUR TI - Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts. AU - Xiang Z AU - Luo JW AU - Li SS PY - 2025 JO - Nature communications DO - 10.1038/s41467-025-65695-y UR - https://doi.org/10.1038/s41467-025-65695-y ER -
APA
Z, X., JW, L., & SS, L. (2025). Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts.. Nature communications. https://doi.org/10.1038/s41467-025-65695-y
Source records
- pubmed · retrieved 2026-11-10T15:12:09.940Z