Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers.
- DOI
- 10.1038/s41467-026-73279-7
- Published
- 2026 May 20
- Container
- Nature communications
- Publisher
- Not recorded
- Open access
- yes
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Cite this work
BibTeX
@article{allodium:10.1038/s41467-026-73279-7,
title = {Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers.},
author = {Duong NT and Krishna S and Nguyen MC and Kim HS and Lam VT and Gul HZ and Choi SH and Kim M and Lee D and Tran TU and Dat VK and Do VD and Hoang VH and Rho H and Kim YM and Yu WJ and Kim KK and Lim SC},
year = {2026},
journal = {Nature communications},
doi = {10.1038/s41467-026-73279-7},
url = {https://doi.org/10.1038/s41467-026-73279-7}
}RIS
TY - JOUR TI - Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers. AU - Duong NT AU - Krishna S AU - Nguyen MC AU - Kim HS AU - Lam VT AU - Gul HZ AU - Choi SH AU - Kim M AU - Lee D AU - Tran TU AU - Dat VK AU - Do VD AU - Hoang VH AU - Rho H AU - Kim YM AU - Yu WJ AU - Kim KK AU - Lim SC PY - 2026 JO - Nature communications DO - 10.1038/s41467-026-73279-7 UR - https://doi.org/10.1038/s41467-026-73279-7 ER -
APA
NT, D., S, K., MC, N., HS, K., VT, L., HZ, G., SH, C., M, K., D, L., TU, T., VK, D., VD, D., VH, H., H, R., YM, K., WJ, Y., KK, K., & SC, L. (2026). Ultrafast switching and high-endurance nonvolatile memory enabled by intrinsic switchable polarization in semiconducting Janus monolayers.. Nature communications. https://doi.org/10.1038/s41467-026-73279-7
Source records
- pubmed · retrieved 2026-09-26T13:59:07.665Z