All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths
- DOI
- 10.1038/s41467-026-74555-2
- Published
- 2026-06-19
- Container
- Nature Communications
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1038/s41467-026-74555-2,
title = {All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths},
author = {Yi Zhang and Xionghui Jia and Jiamin Chen and Minglai Li and Yanping Li and Lun Dai},
year = {2026},
journal = {Nature Communications},
doi = {10.1038/s41467-026-74555-2},
url = {https://doi.org/10.1038/s41467-026-74555-2}
}RIS
TY - JOUR TI - All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths AU - Yi Zhang AU - Xionghui Jia AU - Jiamin Chen AU - Minglai Li AU - Yanping Li AU - Lun Dai PY - 2026 JO - Nature Communications DO - 10.1038/s41467-026-74555-2 UR - https://doi.org/10.1038/s41467-026-74555-2 ER -
APA
Zhang, Y., Jia, X., Chen, J., Li, M., Li, Y., & Dai, L. (2026). All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths. Nature Communications. https://doi.org/10.1038/s41467-026-74555-2
Source records
- crossref · retrieved 2026-09-25T18:54:03.344Z