All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths.

Zhang Y, Jia X, Chen J, Li M, Li Y, Dai L

DOI: 10.1038/s41467-026-74555-2
Published: 2026 Jun 19
Container: Nature communications
Publisher: Not recorded
Open access: yes

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Cite this work

BibTeX

@article{allodium:10.1038/s41467-026-74555-2,
  title = {All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths.},
  author = {Zhang Y and Jia X and Chen J and Li M and Li Y and Dai L},
  year = {2026},
  journal = {Nature communications},
  doi = {10.1038/s41467-026-74555-2},
  url = {https://doi.org/10.1038/s41467-026-74555-2}
}

RIS

TY  - JOUR
TI  - All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths.
AU  - Zhang Y
AU  - Jia X
AU  - Chen J
AU  - Li M
AU  - Li Y
AU  - Dai L
PY  - 2026
JO  - Nature communications
DO  - 10.1038/s41467-026-74555-2
UR  - https://doi.org/10.1038/s41467-026-74555-2
ER  -

APA

Y, Z., X, J., J, C., M, L., Y, L., & L, D. (2026). All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths.. Nature communications. https://doi.org/10.1038/s41467-026-74555-2

Source records

pubmed · retrieved 2026-11-10T14:08:55.926Z