Atomically thin heterojunction-based optoelectronic synaptic devices operable from −190 °C to 450 °C
- DOI
- 10.1038/s41467-026-76364-z
- Published
- 2026-08-05
- Container
- Nature Communications
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1038/s41467-026-76364-z,
title = {Atomically thin heterojunction-based optoelectronic synaptic devices operable from −190 °C to 450 °C},
author = {Yixuan Zou and Jiawen Yan and Haojie Zhao and Guangwei Hu and Zhongxu Hu and Wenlong Lu and Guangming Tao and Zheng You and Peng Li},
year = {2026},
journal = {Nature Communications},
doi = {10.1038/s41467-026-76364-z},
url = {https://doi.org/10.1038/s41467-026-76364-z}
}RIS
TY - JOUR TI - Atomically thin heterojunction-based optoelectronic synaptic devices operable from −190 °C to 450 °C AU - Yixuan Zou AU - Jiawen Yan AU - Haojie Zhao AU - Guangwei Hu AU - Zhongxu Hu AU - Wenlong Lu AU - Guangming Tao AU - Zheng You AU - Peng Li PY - 2026 JO - Nature Communications DO - 10.1038/s41467-026-76364-z UR - https://doi.org/10.1038/s41467-026-76364-z ER -
APA
Zou, Y., Yan, J., Zhao, H., Hu, G., Hu, Z., Lu, W., Tao, G., You, Z., & Li, P. (2026). Atomically thin heterojunction-based optoelectronic synaptic devices operable from −190 °C to 450 °C. Nature Communications. https://doi.org/10.1038/s41467-026-76364-z
Source records
- crossref · retrieved 2026-09-26T18:57:54.037Z