Wafer-scale 2D MoS₂ transistors with sub-5 nm channel length and subthreshold performance beyond the silicon limit.

Lin S, Huang T, Yang N, Zheng X, Yang H, Yun HS, Turner G, Zhong Y, Zou J, Zhang K, Wu J, Grajal J, Lin YC, Xie KY, Wang H, Kong J, Guo J, Shen S, Zhang X

Open source

DOI
10.1038/s41467-026-77186-9
Published
2026 Sep 21
Container
Nature communications
Publisher
Not recorded
Open access
yes

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BibTeX

@article{allodium:10.1038/s41467-026-77186-9,
  title = {Wafer-scale 2D MoS₂ transistors with sub-5 nm channel length and subthreshold performance beyond the silicon limit.},
  author = {Lin S and Huang T and Yang N and Zheng X and Yang H and Yun HS and Turner G and Zhong Y and Zou J and Zhang K and Wu J and Grajal J and Lin YC and Xie KY and Wang H and Kong J and Guo J and Shen S and Zhang X},
  year = {2026},
  journal = {Nature communications},
  doi = {10.1038/s41467-026-77186-9},
  url = {https://doi.org/10.1038/s41467-026-77186-9}
}

RIS

TY  - JOUR
TI  - Wafer-scale 2D MoS₂ transistors with sub-5 nm channel length and subthreshold performance beyond the silicon limit.
AU  - Lin S
AU  - Huang T
AU  - Yang N
AU  - Zheng X
AU  - Yang H
AU  - Yun HS
AU  - Turner G
AU  - Zhong Y
AU  - Zou J
AU  - Zhang K
AU  - Wu J
AU  - Grajal J
AU  - Lin YC
AU  - Xie KY
AU  - Wang H
AU  - Kong J
AU  - Guo J
AU  - Shen S
AU  - Zhang X
PY  - 2026
JO  - Nature communications
DO  - 10.1038/s41467-026-77186-9
UR  - https://doi.org/10.1038/s41467-026-77186-9
ER  -

APA

S, L., T, H., N, Y., X, Z., H, Y., HS, Y., G, T., Y, Z., J, Z., K, Z., J, W., J, G., YC, L., KY, X., H, W., J, K., J, G., S, S., & X, Z. (2026). Wafer-scale 2D MoS₂ transistors with sub-5 nm channel length and subthreshold performance beyond the silicon limit.. Nature communications. https://doi.org/10.1038/s41467-026-77186-9

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