Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory
- DOI
- 10.1038/s41467-026-77913-2
- Published
- 2026-09-21
- Container
- Nature Communications
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1038/s41467-026-77913-2,
title = {Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory},
author = {Feng-Hui Gong and Songge Zhang and Na Li and Xiangwei Guo and Yu-Ting Chen and Yin-Lian Zhu and Jing-Hui Wang and Shuai-Shuai Yin and Xiao-Long Li and Yu-Jia Wang and Hua Yu and Yun-Long Tang and Zijian Hong and Xiaoming Tao and Yang Chai and Guangyu Zhang and Xiu-Liang Ma},
year = {2026},
journal = {Nature Communications},
doi = {10.1038/s41467-026-77913-2},
url = {https://doi.org/10.1038/s41467-026-77913-2}
}RIS
TY - JOUR TI - Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory AU - Feng-Hui Gong AU - Songge Zhang AU - Na Li AU - Xiangwei Guo AU - Yu-Ting Chen AU - Yin-Lian Zhu AU - Jing-Hui Wang AU - Shuai-Shuai Yin AU - Xiao-Long Li AU - Yu-Jia Wang AU - Hua Yu AU - Yun-Long Tang AU - Zijian Hong AU - Xiaoming Tao AU - Yang Chai AU - Guangyu Zhang AU - Xiu-Liang Ma PY - 2026 JO - Nature Communications DO - 10.1038/s41467-026-77913-2 UR - https://doi.org/10.1038/s41467-026-77913-2 ER -
APA
Gong, F., Zhang, S., Li, N., Guo, X., Chen, Y., Zhu, Y., Wang, J., Yin, S., Li, X., Wang, Y., Yu, H., Tang, Y., Hong, Z., Tao, X., Chai, Y., Zhang, G., & Ma, X. (2026). Creation of ferroelectric flux-closure transistor array for non-volatile field-effect memory. Nature Communications. https://doi.org/10.1038/s41467-026-77913-2
Source records
- crossref · retrieved 2026-11-09T04:49:27.137Z