Structural basis of voltage gating in a partially activated K+ channel
- DOI
- 10.1038/s41467-026-78089-5
- Published
- 2026-10-01
- Container
- Nature Communications
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1038/s41467-026-78089-5,
title = {Structural basis of voltage gating in a partially activated K+ channel},
author = {Richa Agrawal and Ramon Mendoza Uriarte and Bernardo I. Pinto-Anwandter and Trayder Thomas and Lydia Blachowicz and Young Hoon Koh and Francisco Bezanilla and Eduardo Perozo and Benoît Roux},
year = {2026},
journal = {Nature Communications},
doi = {10.1038/s41467-026-78089-5},
url = {https://doi.org/10.1038/s41467-026-78089-5}
}RIS
TY - JOUR TI - Structural basis of voltage gating in a partially activated K+ channel AU - Richa Agrawal AU - Ramon Mendoza Uriarte AU - Bernardo I. Pinto-Anwandter AU - Trayder Thomas AU - Lydia Blachowicz AU - Young Hoon Koh AU - Francisco Bezanilla AU - Eduardo Perozo AU - Benoît Roux PY - 2026 JO - Nature Communications DO - 10.1038/s41467-026-78089-5 UR - https://doi.org/10.1038/s41467-026-78089-5 ER -
APA
Agrawal, R., Uriarte, R. M., Pinto-Anwandter, B. I., Thomas, T., Blachowicz, L., Koh, Y. H., Bezanilla, F., Perozo, E., & Roux, B. (2026). Structural basis of voltage gating in a partially activated K+ channel. Nature Communications. https://doi.org/10.1038/s41467-026-78089-5
Source records
- crossref · retrieved 2026-11-10T13:35:07.548Z