Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers
- DOI
- 10.1038/s41467-026-78157-w
- Published
- 2026-10-01
- Container
- Nature Communications
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1038/s41467-026-78157-w,
title = {Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers},
author = {Lei Sun and Tingting Gao and Lin Xu and Wanying Li and Chuanqi Zhang and Zhengyu Zhang and Kian Ping Loh and Yuhui He and Kaustav Banerjee and Yang Chai and Lain-Jong Li and Xiangshui Miao and Xuefei Li},
year = {2026},
journal = {Nature Communications},
doi = {10.1038/s41467-026-78157-w},
url = {https://doi.org/10.1038/s41467-026-78157-w}
}RIS
TY - JOUR TI - Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers AU - Lei Sun AU - Tingting Gao AU - Lin Xu AU - Wanying Li AU - Chuanqi Zhang AU - Zhengyu Zhang AU - Kian Ping Loh AU - Yuhui He AU - Kaustav Banerjee AU - Yang Chai AU - Lain-Jong Li AU - Xiangshui Miao AU - Xuefei Li PY - 2026 JO - Nature Communications DO - 10.1038/s41467-026-78157-w UR - https://doi.org/10.1038/s41467-026-78157-w ER -
APA
Sun, L., Gao, T., Xu, L., Li, W., Zhang, C., Zhang, Z., Loh, K. P., He, Y., Banerjee, K., Chai, Y., Li, L., Miao, X., & Li, X. (2026). Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers. Nature Communications. https://doi.org/10.1038/s41467-026-78157-w
Source records
- crossref · retrieved 2026-11-06T03:09:59.315Z