How spin-transfer-torque magnetoresistive random access memory bridged spintronics research and the microelectronics industry.

Dieny B

DOI: 10.1038/s41565-026-02290-2
Published: 2026 Oct
Container: Nature nanotechnology
Publisher: Not recorded
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1038/s41565-026-02290-2,
  title = {How spin-transfer-torque magnetoresistive random access memory bridged spintronics research and the microelectronics industry.},
  author = {Dieny B},
  year = {2026},
  journal = {Nature nanotechnology},
  doi = {10.1038/s41565-026-02290-2},
  url = {https://doi.org/10.1038/s41565-026-02290-2}
}

RIS

TY  - JOUR
TI  - How spin-transfer-torque magnetoresistive random access memory bridged spintronics research and the microelectronics industry.
AU  - Dieny B
PY  - 2026
JO  - Nature nanotechnology
DO  - 10.1038/s41565-026-02290-2
UR  - https://doi.org/10.1038/s41565-026-02290-2
ER  -

APA

B, D. (2026). How spin-transfer-torque magnetoresistive random access memory bridged spintronics research and the microelectronics industry.. Nature nanotechnology. https://doi.org/10.1038/s41565-026-02290-2

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pubmed · retrieved 2026-11-10T12:12:59.982Z