Gate-induced layer sliding drives non-volatile switching of magnetism in tetralayer graphene
- DOI
- 10.1038/s41565-026-02306-x
- Published
- 2026-10-14
- Container
- Nature Nanotechnology
- Publisher
- Springer Science and Business Media LLC
- Open access
- unknown
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Cite this work
BibTeX
@article{allodium:10.1038/s41565-026-02306-x,
title = {Gate-induced layer sliding drives non-volatile switching of magnetism in tetralayer graphene},
author = {Daniel Brandon and Tixuan Tan and Yiwen Ai and Kyle Nadel and Peter Golemis and Akshat Gandhi and Lujin Min and Wenjun Zheng and Kenji Watanabe and Takashi Taniguchi and Mengkun Liu and Trithep Devakul and Kenji Yasuda},
year = {2026},
journal = {Nature Nanotechnology},
doi = {10.1038/s41565-026-02306-x},
url = {https://doi.org/10.1038/s41565-026-02306-x}
}RIS
TY - JOUR TI - Gate-induced layer sliding drives non-volatile switching of magnetism in tetralayer graphene AU - Daniel Brandon AU - Tixuan Tan AU - Yiwen Ai AU - Kyle Nadel AU - Peter Golemis AU - Akshat Gandhi AU - Lujin Min AU - Wenjun Zheng AU - Kenji Watanabe AU - Takashi Taniguchi AU - Mengkun Liu AU - Trithep Devakul AU - Kenji Yasuda PY - 2026 JO - Nature Nanotechnology DO - 10.1038/s41565-026-02306-x UR - https://doi.org/10.1038/s41565-026-02306-x ER -
APA
Brandon, D., Tan, T., Ai, Y., Nadel, K., Golemis, P., Gandhi, A., Min, L., Zheng, W., Watanabe, K., Taniguchi, T., Liu, M., Devakul, T., & Yasuda, K. (2026). Gate-induced layer sliding drives non-volatile switching of magnetism in tetralayer graphene. Nature Nanotechnology. https://doi.org/10.1038/s41565-026-02306-x
Source records
- crossref · retrieved 2026-11-10T14:27:51.638Z