Ferroelectric transistors for low-power NAND flash memory.

Yoo S, Kim TJ, Nam SG, Kim D, Kim K, Lee Y, Jung M, Lee KH, Choi S, Hyun SD, Lee MH, Hong S, Kim H, Bae KD, Lee H, Won JY, Yun DJ, Chae BG, Hahn WG, Joo CH, Jo S, Park Y, Song KM, Jung K, Lim S, Seo K, Kim K, Kim W, Ha D, Yang JE, Yang SY, Kim S, Heo J, Choe DH

Open source

DOI
10.1038/s41586-025-09793-3
Published
2025 Dec
Container
Nature
Publisher
Not recorded
Open access
unknown

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BibTeX

@article{allodium:10.1038/s41586-025-09793-3,
  title = {Ferroelectric transistors for low-power NAND flash memory.},
  author = {Yoo S and Kim TJ and Nam SG and Kim D and Kim K and Lee Y and Jung M and Lee KH and Choi S and Hyun SD and Lee MH and Hong S and Kim H and Bae KD and Lee H and Won JY and Yun DJ and Chae BG and Hahn WG and Joo CH and Jo S and Park Y and Song KM and Jung K and Lim S and Seo K and Kim K and Kim W and Ha D and Yang JE and Yang SY and Kim S and Heo J and Choe DH},
  year = {2025},
  journal = {Nature},
  doi = {10.1038/s41586-025-09793-3},
  url = {https://doi.org/10.1038/s41586-025-09793-3}
}

RIS

TY  - JOUR
TI  - Ferroelectric transistors for low-power NAND flash memory.
AU  - Yoo S
AU  - Kim TJ
AU  - Nam SG
AU  - Kim D
AU  - Kim K
AU  - Lee Y
AU  - Jung M
AU  - Lee KH
AU  - Choi S
AU  - Hyun SD
AU  - Lee MH
AU  - Hong S
AU  - Kim H
AU  - Bae KD
AU  - Lee H
AU  - Won JY
AU  - Yun DJ
AU  - Chae BG
AU  - Hahn WG
AU  - Joo CH
AU  - Jo S
AU  - Park Y
AU  - Song KM
AU  - Jung K
AU  - Lim S
AU  - Seo K
AU  - Kim K
AU  - Kim W
AU  - Ha D
AU  - Yang JE
AU  - Yang SY
AU  - Kim S
AU  - Heo J
AU  - Choe DH
PY  - 2025
JO  - Nature
DO  - 10.1038/s41586-025-09793-3
UR  - https://doi.org/10.1038/s41586-025-09793-3
ER  - 

APA

S, Y., TJ, K., SG, N., D, K., K, K., Y, L., M, J., KH, L., S, C., SD, H., MH, L., S, H., H, K., KD, B., H, L., JY, W., DJ, Y., BG, C., WG, H., CH, J., S, J., Y, P., KM, S., K, J., S, L., K, S., K, K., W, K., D, H., JE, Y., SY, Y., S, K., J, H., & DH, C. (2025). Ferroelectric transistors for low-power NAND flash memory.. Nature. https://doi.org/10.1038/s41586-025-09793-3

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