Author Correction: Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride.
- DOI
- 10.1038/s41586-026-11267-z
- Published
- 2026 Oct
- Container
- Nature
- Publisher
- Not recorded
- Open access
- no
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Cite this work
BibTeX
@article{allodium:10.1038/s41586-026-11267-z,
title = {Author Correction: Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride.},
author = {Tseng CC and Huang CH and Kao JC and Fu JH and Li A and Ishikawa R and Cho SR and Lei C and Qi K and Deng CZ and Yang PY and Pan CT and Chen WC and Wu MC and Chen FZ and Lin YW and Lo YC and Ho YL and Nagashio K and Chou YC and Shibata N and Pao CW and Tung V},
year = {2026},
journal = {Nature},
doi = {10.1038/s41586-026-11267-z},
url = {https://doi.org/10.1038/s41586-026-11267-z}
}RIS
TY - JOUR TI - Author Correction: Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride. AU - Tseng CC AU - Huang CH AU - Kao JC AU - Fu JH AU - Li A AU - Ishikawa R AU - Cho SR AU - Lei C AU - Qi K AU - Deng CZ AU - Yang PY AU - Pan CT AU - Chen WC AU - Wu MC AU - Chen FZ AU - Lin YW AU - Lo YC AU - Ho YL AU - Nagashio K AU - Chou YC AU - Shibata N AU - Pao CW AU - Tung V PY - 2026 JO - Nature DO - 10.1038/s41586-026-11267-z UR - https://doi.org/10.1038/s41586-026-11267-z ER -
APA
CC, T., CH, H., JC, K., JH, F., A, L., R, I., SR, C., C, L., K, Q., CZ, D., PY, Y., CT, P., WC, C., MC, W., FZ, C., YW, L., YC, L., YL, H., K, N., YC, C., N, S., CW, P., & V, T. (2026). Author Correction: Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride.. Nature. https://doi.org/10.1038/s41586-026-11267-z
Source records
- pubmed · retrieved 2026-11-10T14:35:14.939Z
- europe-pmc · retrieved 2026-11-10T14:35:14.941Z