Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors

Hongfei Li, Yuzheng Guo, John Robertson

Open source

DOI: 10.1038/s41598-017-17290-5
Published: 2017-12-04
Container: Scientific Reports
Publisher: Springer Science and Business Media LLC
Open access: unknown

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Cite this work

BibTeX

@article{allodium:10.1038/s41598-017-17290-5,
  title = {Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors},
  author = {Hongfei Li and Yuzheng Guo and John Robertson},
  year = {2017},
  journal = {Scientific Reports},
  doi = {10.1038/s41598-017-17290-5},
  url = {https://doi.org/10.1038/s41598-017-17290-5}
}

RIS

TY  - JOUR
TI  - Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors
AU  - Hongfei Li
AU  - Yuzheng Guo
AU  - John Robertson
PY  - 2017
JO  - Scientific Reports
DO  - 10.1038/s41598-017-17290-5
UR  - https://doi.org/10.1038/s41598-017-17290-5
ER  -

APA

Li, H., Guo, Y., & Robertson, J. (2017). Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors. Scientific Reports. https://doi.org/10.1038/s41598-017-17290-5

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crossref · retrieved 2026-11-10T14:32:18.565Z